Tungsten oxide films are deposited onto glass and silicon substrates using reactive magnetron sputtering. Several studies have revealed difficulties in studying the electrical properties of resistive WOx films. The main objective of this work is to propose the capacitance meter as a method for studying the electrical properties of resistive WOx films. In addition, we aim to establish the correlation between the deposition process and WOx physico-chemical properties. The study of the W-Ar-O2 system hysteresis permitted us to gather the films into four zones, which were delimited by different oxygen flow rate intervals. The identification of these zones was confirmed by the deposition rate, target voltage, chemical composition and electrical properties of the films. A gradual evolution of the capacitance-voltage curves of the metal-oxide-semiconductor structures, with the WOx thin films as the oxide layer, was globally observed with increasing oxygen flow rate. Ion density (Nss) and flat band voltage (Vfb) evolved inversely to oxygen flow rate. The relationship between the evolution of Nss and Vfb and the increase in oxygen flow rate reflects the improvement in oxygen stoichiometry in the WOx films. The WOx-Si interface trap density distribution (Dit) was also studied using the Terman method. It was observed that the films closest to stoichiometry, i.e., WO2 or WO3, showed the lowest values of Dit and Nss.

Lanthanum manganite (LMO) thin films were deposited by co-sputtering La and Mn targets in an Ar and O2 gas mixture. The films were synthesized on silicon and fused silica substrates. The influences of thermal annealing on the structure, optical and electrical properties of LMO films were investigated. The results exhibited a correlation between these properties. In the amorphous state, an increase in annealing temperature improved the optical transmission and decreased the electrical capacitance. The beginning of crystallization at 600 °C was manifested by a strong increase in the capacitance and a decrease in the optical transmission. At higher annealing temperature, polycrystalline films were obtained with different optical and electrical characteristics. On the other hand, the annealed LMO films showed a photocurrent effect during exposure to a weak LED light.