The (GeTe)1−γ–(Sb2Te3)γ pseudobinary system has, over almost its entire composition range, two kinds of crystalline phase: one is a metastable phase with a NaCl-type structure and the other is a spectrum of stable phases with homologous structures. In the metastable phase, Ge/Sb atoms and intrinsic vacancies occupy the Na sites; on the other hand, Te atoms are located at the Cl sites. These vacancies are produced by following γ/1+2γ to ensure the stoichiometry of the metastable pseudobinary compound. This metastable phase obstinately holds its NaCl-type structure and resists transformation to stable homologous structures, even at high temperatures on the GeTe-rich side of the system. In GeTe (γ=0), the NaCl-type atomic configuration itself is the stable structure. GeTe has, as is well known, a high-temperature cubic phase and a low-temperature rhombohedral phase. This GeTe and the pseudobinary compounds containing a small quantity of Sb2Te3 have their single-phase regions not on the GeTe–Sb2Te3 tie line but at Ge-poor sides off the line: in other words, the Na sites of these off-stoichiometric compounds have some excess vacancies besides the intrinsic vacancies. As Sb2Te3 is further added to GeTe, however, the structural transformation temperature continuously falls and the single-phase region converges on the tie line as the excess vacancies at the Na site disappear, which change its electrical property from metallic to semiconducting conductivity. The low-temperature rhombohedral phase is present up to near γ=0.14. The NaCl-type metastable phase becomes unstable with increased Sb2Te3; after subjecting the compound Ge8Sb2Te11 (γ=0.11) to heat treatment for 15 days at 773 K, a stable homologous structure appeared.

GeTe(1-x)-Sb2Te3(x) sputtered amorphous film was crystallized into a simple NaCl-type structure through instantaneous laser irradiation over a wide composition range from x = 0 to at least 2/3. When the ratio of Sb2Te3 increases, a vacancy is generated at every Na site for two Sb atoms. The fraction of vacancies, v(x), changes according to x/(1 + 2x), and the cubic root unit cell volume varies with a strong correlation to v(x). Through these created vacancies, valence electrons provided by adjacent Ge/Sb and Te atoms remain constant regardless of the composition, ensuring that these electrons occupy predominantly the bonding molecular orbitals. This results in crystal chemical stability, with the closed shell p-p bondings in the valence electrons arranging the crystal's atomic configuration into an NaCl-type structure.

The crystal structure of the delta-phase in the Sb-Te binary system has been determined by synchrotron powder diffraction. It is clearly shown that many intermetallic compounds, which have different stacking periods depending on compound composition, exist in this phase. These structures are based on the cubic ABC stacking structure, and two kinds of fundamental structural units form an intergrowth along the stacking direction at the atomic level. The chemical formulae of these compounds are expressed as Sb(2n)Te3, where n is an integer and the number of stacking layers is 2n + 3. There is a relationship of inverse proportionality between the stacking period and the Te concentration.