We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxidesemiconductor field effect transistor structure with a Si channel and a CoFe/n + -Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/n + -Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature.PACS numbers:

No abstract

No abstract

The use of Si(011)/Si(001) direct silicon bonding (DSB) substrates is a key element of future complementary metal-oxide-semiconductor device technology. In the conventional bonding process, it is necessary to remove interfacial SiO2 to achieve direct atomic bonding. In this study, using X-ray microdiffraction and transmission electron microscopy, we investigate the structural changes caused by oxide out-diffusion annealing (ODA). It is revealed that crystallinity of the bonded Si(011) layer is degraded after low temperature ODA and gradually recovered with an increase in the ODA temperature and annealing time, which is well correlated with the interfacial SiO2/Si morphology. Characteristic domain textures depending on the ODA temperature are also detected.

No abstract