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This paper describes NAND cell scaling directions for 20nm and beyond. Many of the 2D NAND cell scaling challenges can be resolved by a planar floating gate (FG) cell. Scaling directions and key technology requirements for 3D NAND are also discussed. 2D NAND Cell ScalingStructure Fig. 1 shows cross sections of a wrap FG cell and a planar FG cell. The increase of aspect ratio (A.R.) is a key limiter for the wrap FG cell scaling (Fig. 2). A.R. becomes >10 for both the word-line and the bit-line directions in a sub-20nm wrap cell. The planar cell eliminates this limitation [1].

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