We report the synthesis and characterization of axial nanorod heterostructures composed of cadmium selenide (CdSe) and cadmium sulfide (CdS). The synthesis employs a solution-liquid-solid (SLS) mechanism with the assistance of bismuth nanocrystals adhered to a substrate (silicon or a III-V semiconductor). Transmission electron microscopy (TEM) and diffraction studies show that CdSe and CdS segments exhibit the wurtzite (hexagonal) crystal structure with <5% stacking faults. Both of these segments grow along the [002] direction with an epitaxial interface between them. Energy-dispersive X-ray (EDX) spectrometry using a high-resolution TEM operating in scanning mode confirms the alloy-free composition modulation in the nanorod heterostructures, showing that Se and S are localized in the CdSe and CdS portions of the nanorod heterostructures, respectively. This study demonstrates that SLS synthesis provides an alternate route to prepare axial nanorod heterostructures that have been difficult to generate using either vapor-liquid-solid growth or catalyst-free solution-phase synthesis.

We report the fabrication and characterization of light-emitting transistors incorporating individual cadmium selenide (CdSe) nanocrystals. Electrical measurements conducted at low bias voltage and low temperature show clear evidence of Coulomb blockade behavior, indicating that electrons pass through the nanocrystal by single-electron tunneling. Once the bias voltage exceeds the band gap of CdSe, devices with asymmetric tunnel barriers emit linearly polarized light. Combined analyses of the electrical and optical data indicate that the tunnel couplings between the nanorod and the metallic electrodes change significantly as a function of bias voltage and light emission results from the inelastic scattering of tunneling electrons.

We report electroluminescence (EL) measurements carried out on three-terminal devices incorporating individual n-type CdSe nanowires. Simultaneous optical and electrical measurements reveal that EL occurs near the contact between the nanowire and a positively biased electrode or drain. The surface potential profile, obtained by using Kelvin probe microscopy, shows an abrupt potential drop near the position of the EL spot, while the band profile obtained from scanning photocurrent microscopy indicates the existence of an n-type Schottky barrier at the interface. These observations indicate that light emission occurs through a hole leakage or an inelastic scattering induced by the rapid potential drop at the nanowire-electrode interface.Comment: 12 pages, 4 figure

Our study shows that the rates of neutropenia in clozapine-treated children and adolescents are considerably higher than in the adult population. Younger age, African American ethnicity, and male gender were significant risk factors. These are also risk factors for benign neutropenia in healthy children and adolescents. Despite these high rates of neutropenia, all but one of the patients with neutropenia during hospitalization were successfully discharged on clozapine.