Perovskite silicon tandem solar cells have the potential to overcome the efficiency limit of single-junction solar cells. For both monolithic and mechanically stacked tandem devices, a semi-transparent perovskite top solar cell, including a transparent contact, is required. Usually, this contact consists of a metal oxide buffer layer and a sputtered transparent conductive oxide. In this work, semi-transparent perovskite solar cells in the regular n–i–p structure are presented with tin-doped indium oxide (ITO) directly sputtered on the hole conducting material Spiro-OMeTAD. ITO process parameters such as sputter power, temperature, and pressure in the chamber are systematically varied. While a low temperature of 50 °C is crucial for good device performance, a low sputter power has only a slight effect, and an increased chamber pressure has no influence on device performance. For the 5 × 5 mm2 perovskite cell with a planar front side, a 105 nm thick ITO layer with a sheet resistance of 44 Ω sq–1 allowing for the omission of grid fingers and a MgF2 antireflection coating are used to improve transmission into the solar cells. The best device achieved an efficiency of 14.8%, which would result in 24.2% in a four-terminal tandem configuration.

Perovskite silicon tandem solar cells are a promising technology to overcome the efficiency limit of silicon solar cells. Although highest tandem efficiencies have been reported for the inverted p‐i‐n structure, high‐efficiency single junction perovskite solar cells are mostly fabricated in the regular n‐i‐p architecture. In this work, regular n‐i‐p perovskite solar cells with a high‐bandgap mixed cation mixed halide absorber suitable for tandem solar cells are investigated by compositional engineering and the open‐circuit voltage is improved to over 1.12 V using a passivating electron contact. The optimized perovskite solar cell is used as a top cell in a monolithic perovskite silicon tandem device with a silicon heterojunction bottom cell allowing for voltages up to 0.725 V. The tandem solar cells with an active area of 0.25 cm2 achieve record open‐circuit voltages of up to 1.85 V and have efficiencies over 20%. Analyzing the perovskite absorber by spatially resolved photoluminescence measurements shows a homogenous and stable emission at ~ 1.7 eV which is an optimal value for tandem applications with silicon. The tandem solar cells are mainly limited due to a low current. A spectrometric characterization reveals that the perovskite solar cell is current limiting which could be improved by a thicker perovskite absorber.

The most efficient organic-inorganic perovskite solar cells (PSCs) contain the conventional n-i-p mesoscopic device architecture using a semiconducting TiO scaffold combined with a compact TiO blocking layer for selective electron transport. These devices achieve high power conversion efficiencies (15-22%) but mainly require high-temperature sintering (>450 °C), which is not possible for temperature-sensitive substrates. Thus far, comparably little effort has been spent on alternative low-temperature (<150 °C) routes to realize high-efficiency TiO-based PSCs; instead, other device architectures have been promoted for low-temperature processing. In this paper the compatibility of the conventional mesoscopic TiO device architecture with low-temperature processing is presented for the first time with the combination of electron beam evaporation for the compact TiO and UV treatment for the mesoporous TiO layer. Vacuum evaporation is introduced as an excellent deposition technique of uniform compact TiO layers, adapting smoothly to the rough fluorine-doped tin oxide substrate surface. Effective removal of organic binders by UV light is shown for the mesoporous scaffold. Entirely low-temperature-processed PSCs with TiO scaffold reach encouraging stabilized efficiencies of up to 18.2%. This process fulfills all requirements for monolithic tandem devices with high-efficiency silicon heterojunction solar cells as the bottom cell.

In the last years, novel materials for the formation of electron-selective contacts on n-type crystalline silicon (c-Si) heterojunction solar cells were explored as an interfacial layer between the metal electrode and the c-Si wafer. Besides inorganic materials like transition metal oxides or alkali metal fluorides, also interfacial layers based on organic molecules with a permanent dipole moment are promising candidates to improve the contact properties. Here, the dipole effect plays an essential role in the modification of the interface and effective work function of the contact. The amino acids L-histidine, L-tryptophan, L-phenylalanine, glycine, and sarcosine, the nucleobase adenine, and the heterocycle 4-hydroxypyridine were investigated as dipole materials for an electron-selective contact on the back of p- and n-type c-Si with a metal electrode based on aluminum (Al). Furthermore, the effect of an added fluorosurfactant on the resulting contact properties was examined. The performance of n-type c-Si solar cells with a boron diffusion on the front was significantly increased when L-histidine and/or the fluorosurfactant was applied as a full-area back surface field. This improvement was attributed to the modification of the interface and the effective work function of the contact by the dipole material which was corroborated by numerical device simulations. For these solar cells, conversion efficiencies of 17.5% were obtained with open-circuit voltages (Voc) of 625 mV and fill factors of 76.3%, showing the potential of organic interface dipoles for silicon organic heterojunction solar cells due to their simple formation by solution processing and their low thermal budget requirements.

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