In this work, transparent amorphous-MgNb 2 O 6 thin films were fabricated on ITO/glass substrates using the sol-gel method. The change in the chemical states, as well as the optical and dielectric properties of MgNb 2 O 6 films at various annealing temperatures is investigated. In this study, MgNb 2 O 6 films exhibited the amorphous phase when the annealing temperature was below 600°C. From X-ray photoelectron spectroscopy, the major parts of the films' chemical states can be indexed as Mg 2+ , Nb 5+ , Nb 4+ , and O 2À . Furthermore, the Nb 4+ element can be reduced at higher annealing temperatures. The average transmission percentage in the visible range (k = 400-800 nm) is over 80% for all MgNb 2 O 6 /ITO/glass samples, whereas the optical band gap (E g ) for all samples is estimated at~4 eV. In addition, the dielectric constant was calculated to be higher than 20 under a 1 MHz AC electric field, with a leakage current density below 2 3 10 À7 A/cm 2 at 1 V. In this study, the fabrication procedure and experiment results of MgNb 2 O 6 films are introduced for transparent microelectronics.

The effects of annealing atmosphere (N2, air and O2) on the electrical properties of sol–gel‐derived MgNb2O6/ITO heterostructures are discussed in this work. All samples exhibited the amorphous phase and were highly transparent. The percentage of Nb4+ content increased when the films were annealed in the oxygen‐deficient conditions, which could lead to semiconducting films. In addition, the results show that the electrical properties of sol–gel‐derived MgNb2O6 thin films could be tuned based on the annealing atmosphere. Moreover, the conduction mechanisms of MgNb2O6/ITO heterostructures are also discussed in this study. The results show that MgNb2O6 thin films have potential for use in multifunctional optoelectronic applications, due to their flexible electrical properties and good transparency.

MgNb2O6, a well-known ceramic material with columbite crystal structure, has attracted much attention in microwave integrated circuits and optical applications due to its superior properties, such as its high dielectric constant and an optical band gap. In this work, transparent amorphous-MgNb2O6thin films were fabricated on ITO/glass substrates using the sol-gel method. The average optical transmission percentage in the visible range (λ=400–800 nm) is over 80% for all MgNb2O6/ITO/glass samples, while the optical band gap is estimated at ~4 eV. On the other hand, the dielectric properties of the MgNb2O6thin films were very sensitive to the annealing conditions. In this study, the dielectric constant of the films was calculated to be higher than 30 under a 100 kHz AC electric field. The effects of the annealing temperature and atmosphere on the dielectric properties of the MgNb2O6thin films were investigated.