A SPICE-based dual random circuit breaker (RCB) network model with an equivalent thermal circuit network has been proposed in order to emulate resistance switching (RS) of unipolar resistive random access memory (RRAM). The dual RCB network model consists of the electrical RCB network model for the forming and set operations and the equivalent thermal circuit network model for the reset operation. In addition, the proposed model can explain the effects of heat dissipation on the memory and threshold RS with the variation in electrode thickness.

Abstract-The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models.Index Terms-Realistic cell structure optimization, finite element method (FEM), bipolar resistive random access memory (RRAM).