Flicker (1/f) noise and TCR are compared for arsenic-and phosphorus-doped polysilicon in a 0.18 m CMOS base technology. Resistors implanted with arsenic exhibit about 4 times higher noise than with phosphorus at the same dose and thermal budget. The TCR of arsenicdoped polysilicon is negative, near -1065 ppm/K, while that of phosphorus-doped resistors positive, about + 590 ppm/K. The mismatch of N-channel MOSFETs with arsenic-doped gates is about 40% lower than with phosphorus gates. The results are attributed to the difference in grain-size and dopant segregation. The difference in grain size is confirmed by TEM and SEM micrographs. Index Terms -polysilicon resistor, 1/f noise, TCR, mismatch.

NGN(Next-Generation Network) structure has been considered from various points of view as all IP wire/wireless integration network, based on all optical backbone network in general. In this research, the mid-term and long-term strategies of view on NGN were explained, as well as wire/wireless network integration, trends of standardization protocols, access gateways and softswitches in NGN deployment.