We report on a monolithic dual-mode semiconductor laser operating in the 1550-nm range as a compact optical beat source for tunable continuous-wave (CW) terahertz (THz) generation. It consists of two distributed feedback (DFB) laser sections and one phase section between them. Each wavelength of the two modes can be independently tuned by adjusting currents in micro-heaters which are fabricated on the top of the each DFB section. The continuous tuning of the CW THz emission from Fe(+)-implanted InGaAs photomixers is successfully demonstrated using our dual-mode laser as the excitation source. The CW THz frequency is continuously tuned from 0.17 to 0.49 THz.

We propose a widely tunable dual-wavelength Erbium-doped fiber laser that uses two micro-heater-integrated Fabry-Perot laser diodes (FP-LDs) and two fiber Bragg gratings (FBGs) for tunable continuous-wave (CW) terahertz (THz) radiation. Each wavelength can be independently tuned by using an FP-LD and an FBG. The wavelength fine tuning is achieved by simultaneously applying current to the micro-heater on the FP-LD and strain to the FBG. The side-mode suppression ratio is more than 35 dB for both wavelengths. The wavelength spacing of the dual wavelength can be continuously tuned from 3.2 nm to 9.6 nm. Continuous frequency tuning of the CW THz radiation is also successfully achieved using an InGaAs-based photomixer with our dual-wavelength fiber laser as the optical beat source. The emitted CW THz radiation is continuously tuned from 0.3 to 0.8 THz.

We present a terahertz (THz) broadband antenna-integrated 1 × 20 InGaAs Schottky barrier diode (SBD) array detector with an average responsivity of 98.5 V/W at a frequency of 250 GHz, which is measured without attaching external amplifiers and Si lenses, and an average noise equivalent power (NEP) of 106.6 pW/√Hz. The 3-dB bandwidth of the SBD detector is also investigated at approximately 180 GHz. For implementing an array-type SBD detector by a simple fabrication process to achieve a high yield, a structure comprising an SiN(x) layer instead of an air bridge between the anode and the cathode is designed. THz line beam imaging using a Gunn diode emitter with a center frequency of 250 GHz and a 1 × 20 SBD array detector is successfully demonstrated.

Food quality monitoring, particularly foreign object detection, has recently become a critical issue for the food industry. In contrast to X-ray imaging, terahertz imaging can provide a safe and ionizing-radiation-free nondestructive inspection method for foreign object sensing. In this work, a quasi-Bessel beam (QBB) known to be nondiffracting was generated by a conical dielectric lens to detect foreign objects in food samples. Using numerical evaluation via the finite-difference time-domain (FDTD) method, the beam profiles of a QBB were evaluated and compared with the results obtained via analytical calculation and experimental characterization (knife edge method, point scanning method). The FDTD method enables a more precise estimation of the beam profile. Foreign objects in food samples, namely crickets, were then detected with the QBB, which had a deep focus and a high spatial resolution at 210 GHz. Transmitted images using a Gaussian beam obtained with a conventional lens were compared in the sub-terahertz frequency experimentally with those using a QBB generated using an axicon.

Photoconductive antennas with nano-structured electrodes and which show significantly improved performances have been proposed to satisfy the demand for compact and efficient terahertz (THz) sources. Plasmonic field enhancement was previously considered the dominant mechanism accounting for the improvements in the underlying physics. However, we discovered that the role of plasmonic field enhancement is limited and near-field distribution of bias field should be considered as well. In this paper, we clearly show that the locally enhanced bias field due to the size effect is much more important than the plasmonic enhanced absorption in the nano-structured electrodes for the THz emitters. Consequently, an improved nano-electrode design is presented by tailoring bias field distribution and plasmonic enhancement. Our findings will pave the way for new perspectives in the design and analysis of plasmonic nano-structures for more efficient THz photonic devices.