Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallizationInterfacial reactions of Cu with amorphous silicon ͑a-Si͒ in the Cu/ a-Si/glass system are studied by in situ high-resolution transmission electron microscopy at 550°C. Various Cu silicides, such as -Cu 3 Si, Cu 15 Si 4 , and Cu 5 Si, and Cu particles are observed. The formation of the Cu particles can be attributed to a heating effect from electron beam irradiation. Around the Cu silicides, crystallization of a-Si occurs. Around the Cu particles, however, crystallization does not occur. Crystallization appears to be enhanced by Cu dissolved in a-Si.

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