the formation of hydrogen blisters in the fabrication of tunnelling oxide passivating contact (topcon) solar cells critically degrades passivation. in this study, we investigated the formation mechanism of blisters during the fabrication of topcons for crystalline silicon solar cells and the suppression of such blisters. We tested the effects of annealing temperature and duration, surface roughness, and deposition temperature on the blister formation, which was suppressed in two ways. first, topcon fabrication on a rough surface enhanced adhesion force, resulting in reduced blister formation after thermal annealing. Second, deposition or annealing at higher temperatures resulted in the reduction of hydrogen in the film. A sample fabricated through low-pressure chemical vapor deposition at 580 °C was free from silicon-hydrogen bonds and blisters after the TOPCon structure was annealed. Remarkably, samples after plasma-enhanced chemical vapor deposition at 300, 370, and 450 °C were already blistered in the as-deposited state, despite low hydrogen contents. Analysis of the hydrogen incorporation, microstructure, and deposition mechanism indicate that in plasma-enhanced chemical vapor deposition (pecVD) deposition, although the increase of substrate temperature reduces the hydrogen content, it risks the increase of porosity and molecular-hydrogen trapping, resulting in even more severe blistering.

Tunnel oxide passivated contacts (TOPCon) embedding a thin oxide layer between polysilicon and base crystalline silicon have shown great potential in the development of solar cells with high conversion efficiency. In this study, we investigate the formation mechanism of hole-carrier selective contacts with TOPCon structure on n-type crystalline silicon wafers. We explore the thermal annealing effects on the passivation properties in terms of the stability of the thermally-formed silicon oxide layer and the deposition conditions of boron-doped polysilicon. To understand the underlying principle of the passivation properties, the active dopant in-diffusion profiles following the thermal annealing are investigated, combined with an analysis of the microscopic structure. Based on PC1D simulation, we find that shallow in-diffusion of boron across a robust tunnel oxide forms a p–n junction and improves the passivation properties. Our findings can provide a pathway to understanding and designing high-quality hole-selective contacts based on the TOPCon structure for the development of highly efficient crystalline silicon solar cells.

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We demonstrated that a well-designed nanopatterned cover improves photovoltaic efficiency across a wide range of incident angles (θ). A nanopatterned cover was created using an integrated ray-wave optics simulation to maximize the light absorption of the surface-textured Si photovoltaic device. A hexagonally arranged nanocone array with a 300 nm pitch was formed into a polymer using nanoimprinting, and the nanostructured polymer was then attached to a glass cover with an index-matching adhesive. Angle-resolved current density-voltage measurements on Si photovoltaic devices showed that the nanopatterned glass cover yielded a 2–13% enhancement in power conversion efficiency at θ = 0–60°, which accounted for its broadband antireflective feature. We performed all-season-perspective simulations based on the results of the integrated ray-wave optics simulations and solar altitude database of South Korea, which validated the sustainability of the developed nanopatterned cover during significant seasonal fluctuations.