This paper presents the fabrication method of single crystal silicon nanowire, which is easy to control the size and position of nanowire. Therefore it can be used in various sensors like a pressure sensor, a tactile sensor and a microphone. Spacer, which is created by two cycles of Deposition & Etch process, is used as the dry etch mask, and beyond 100 nm nanowire bridges are fabricated. This paper provides the easy way to make sensors using good piezoresistivity of single crystal silicon nanowire. The resistance of nanowire measured as 4.5 MΩ

We report on the unusual behavior of threshold voltage turnaround in a hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) when biased under extremely high intensity illumination. The threshold voltage shift changes from negative to positive gate bias direction after ∼30 min of bias stress even when the negative gate bias stress is applied under high intensity illumination (>400 000 Cd/cm(2)), which has not been observed in low intensity (∼6000 Cd/cm(2)). This behavior is more pronounced in a low work function gate metal structure (Al: 4.1-4.3 eV), compared to the high work function of Cu (4.5-5.1 eV). Also this is mainly observed in shorter wavelength of high photon energy illumination. However, this behavior is effectively prohibited by embedding the high energy band gap (∼8.6 eV) of SiOx in the gate insulator layer. These imply that this behavior could be originated from the injection of electrons from gate electrode, transported and trapped in the electron trap sites of the SiNx/a-Si:H interface, which causes the shift of threshold voltage toward positive gate bias direction. The results reported here can be applicable to the large-sized outdoor displays which are usually exposed to the extremely high intensity illumination.

We report the effects of monochromatic illumination on the electrical performance of a-SiGe:H thin-film transistor (TFT) and the use of this device as infrared (IR) image-sensing touch displays. In order to reduce the inevitable incidence of visible light into device, the visible cutting layer was designed, which played a critical role in reducing the optical noise from visible light. When the photo response was observed in real liquid crystal display (LCD) operation environment, it showed the display contents dependence, meaning that the supply of external IR light source for the touch sensing would be effective independent of any ambient light condition. Additionally, the optical noise from the display operation was eliminated using the block operation as well as the backlight IR light-emitting diode (LED) light modulation. From these, the clear touch images were successfully obtained in the a-SiGe:H photosensor embedded LCD panel.Index Terms-Amorphous SiGe, infrared (IR) detector, photosensor, thin-film transistor (TFT).