Nanocrystalline PbS thin films were prepared by Chemical Bath Deposition (CBD) at 40 ± 2°C onto glass substrates and their structural and optical properties modified by in-situ doping with Hg. The morphological changes of the layers were analyzed using SEM and the X-rays spectra showing growth on the zinc blende (ZB) face. The grain size determined by using X-rays spectra for undoped samples was found to be~36 nm, whereas with the doped sample was 32–20 nm. Optical absorption spectra were used to calculate theEg, showing a shift in the range 1.4–2.4 eV. Raman spectroscopy exhibited an absorption band~135 cm−1displaying only a PbS ZB structure.

PbS:Cu nanocrystalline films were prepared by chemical bath at temperature of 80 degrees C and deposited on glass substrates. Different Cu-doping levels were obtained changing the volume of the Cu-reagent-solution into the PbS growing solution. X-ray diffraction (XRD) and optical absorption (OA) measurements were carried out to characterize the semiconductor. The morphological changes of the layers were analyzed using an atomic force microscopy. Diffraction X-ray spectra displayed peaks at 2 theta = (26.00, 30.07, 43.10, 51.00 and 53.48), indicating growth on the zinc blende face. The grain size determined by X-rays diffraction of the undoped samples, was found -37 nm, whereas with the doped sample was - 32-25 nm. Raman spectra reports strong band in - 133-140 cm(-1) attributed to a combination of longitudinal and transversal acoustic modes. Optical absorption, forbidden band gap energy (E(g)) shift disclose a shift in the range 1.4-2.4 eV. Gibbs free energy calculation for the Cu doping PbS is also included heading.