The epitaxial growth of InN by the open tube flow method using the interaction of InCl3 and NH3 is discussed. The influence of various technological parameters on the process and structure perfection of the epitaxial layers, grown on the single crystal (0001)‐oriented sapphire substrates is considered. The main kinetic dependences of the process are plotted and discussed. InN epitaxial layers were mosaic and n‐type with electron concentration 2 · 1020–8 · 1021 cm−3 and mobilities 50‐35 cm2/V · s, respectively.

The results on etching of sapphire substrates with different orientation are discussed. High temperature etching in hydrogen stream and etching in the mixture of H3PO4 and H2SO4 were used in experiments. The relation of etching rates for different sapphire orientations were established in both cases. The conditions of nonselective etching were determined.

Luminescence of GaN epitaxial layers grown by decomposition of complex gallium chloride ammonide GaCl, . NH, in N,-ambient is discussed. Zn doping results in an intensive emission peak at (2.87 0.02) eV with a halfwidth of about 0.4 eV. A correlation of lnminescenco intensity with doping conditions is analyzed. nomemeM KoMnneKca MoHoaMMuaKaTa xnopana r a m m B amocaepe a3o~a. Dew-06cywnae~cn JIIOMUHeCqeHUAH 3IIHTaKCAaJIbHbIX CJlOeB GaN, nOJIy4eHHbIX pas-POBaHUe UMHKOM IIpHBOnElJIO K IIOHBJIeHHIO HHTeRCElBHOrO El3JlyYeHRJi C MBKCH-MYMOM npa (2,87 0,02) eV U nOJIyWUpAHO# OKOJIO 0,4 ev. A~anHaupye~cfz CBfiBb t l HTeHCMBHOCTU JlIOMAHeC~eLfiIElA C yCJI0BHHMIi JIerUpOBaHUfI.

The growth kinetics of GaN on Sapphire was analyed on the base of some experimental data such as: the growth rate temperature depandence, on the base of some experimental data such as: the growth rate temperature dependence, the grwoth rate dependence on the gas flow velocity, the growth rate depandence on the crystallographic and spatial orientation of the substrate. The limiting stage of the epitaxy process was established at different growth conditions. The morphology of GaN epitaxial layers obtained at these conditions is described.