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The integration of passive components on silicon for future DC-DC converters applications is still a challenging area of research. This paper reports the microfabrication of a fully integrated filter containing a spiral inductor on top of a 3D capacitor. A thin magnetic shielding layer is introduced between the two components demonstrating that losses caused by the inductor in the capacitor area are reduced, thus increasing the maximum working frequency of the whole component. The fabricated filter was characterized in a test circuit (buck-type converter).

The attenuation and the electrical permittivity of the double-walled carbon nanotubes (DWCNTs) were determined in the frequency range of 1-65 GHz. A micromachined coplanar waveguide transmission line supported on a Si membrane with a thickness of 1.4 µm was filled with a mixture of DWCNTs. The propagation constants were then determined from the S parameter measurements. The DWCNTs mixture behaves like a dielectric in the range of 1-65 GHz with moderate losses and an abrupt change of the effective permittivity that is very useful for gas sensor detection. Article References Footnotes The carbon nanotubes are now extensively studied for various microwave applications (see Ref. 1 for an extensive review). Passive devices such as filters, 2 and active devices such as oscillators, 3 mixers, 4 and nanoelectromechanical systems (NEMS) 5,6,7,8 are envisaged to be implemented using carbon nanotubes (CNTs) and having impressive performances. These performances originate in the amazing physical properties of the CNTs. Among these properties are the huge Young modulus (~1 TPa), ballistic transport at room temperature for nanotubes with the mean-free-path length around 1 µm and where the mobility in semiconducting CNTs could attain even 120 000 cm 2 V-1 s-1 at a moderate electric field of 10 kV/cm, and the band engineering of CNTs obtained by the rolling of a graphene sheet at different angles, accompanied by applied transverse electric fields or pressure. Moreover, the band gap of the semiconducting CNTs is