Abstract-The concept of an active integrated dosimetric sensor for the radiation monitoring of the Compact Muon Solenoid experiment at the CERN (European Center for Nuclear Research) LargeHadron Collider is presented. The sensor, based on RadFET, OSL, p-i-n diode, and pad detector dosimeters, will measure both ionizing and nonionizing energy losses in the harsh radiation environment produced by hadron interactions.

International audienc

In previous works, we have demonstrated the importance of dynamic mode testing of SRAM components under ionizing radiation. Several types of failures are difficult to expose when the device is tested under static (retention) mode. With the purpose of exploring and defining the most complete testing procedures and reveal the potential hazardous behaviors of SRAM devices, we present novel methods for the dynamic mode radiation testing of SRAMs. The proposed methods are based on different word address accessing schemes and data background: Fast Row, Fast Column, Pseudorandom, Adjacent (Gray) and Inverse Adjacent (Gray). These methods are evaluated by heavy ion and atmospheric-like neutron irradiation of two COTS SRAMs of 90 nm and 65 nm technology. Index Terms-65 nm, 90 nm, COTS, dynamic test, heavy ions, multiple cell upset (MCU), neutrons, single event upset (SEU), SRAMs.

International audienceTotal ionizing dose (TID) strongly affects the single event transient (SET) sensitivity of a bipolar linear voltage comparator (LM139). The general rule that transistors in the non-conducting state are the most sensitive to SETs was verified, with some exceptions. The mechanisms responsible for those exceptions were identified and explained using circuit analysis. In the non typical behavior, a correlation of the degradation of the amplifier stages with the shape of the transient output signal was established. Following total dose exposure the SETs generally exhibit a reduction in amplitude due to the degradation of the slew rate. However, in some cases the transient signal is amplified because degradation of either the current source or of the current gain of some transistors forces the output transistor to the edge of conduction, so that it behaves like a voltage amplifier and amplifies the parasitic transient signal. Laser testing demonstrates that ASET sensitivity also is affected by TID degradation of transistors that are not directly hit by the laser