No abstract

Ureteral hernia is uncommon and usually misdiagnosed. From an anatomic point of view, we can distinguish between two uretero-inguinal hernias: intraperitoneal and extraperitoneal. Ureter inguinal hernias are nearly always indirect. This kind of hernia can include the ureter alone or, frequently, other abdominal sliding organs within the hernia sac (bladder, bowel tracts, etc.). Kidneys and urinary tracts present normal anatomic conformation, although renal ptosis may be found. As of July 2004, 139 cases of ureteral hernia had been described in the literature. Here we report a case of inguino-scrotal herniation of double district ureter and review the current literature to analyze the main clinical characteristics of this pathology and to establish pitfalls.

Uremic patients are at high risk of hepatitis B virus (HBV) infection and, despite the availability and efficacy of hepatitis B vaccine, a high rate of non responders has been reported. Forty uremic patients undergoing maintenance hemodialysis who failed to produce any measurable anti-HBs antibody response after 4 administrations of 5 μg of Hevac B Pasteur vaccine were admitted to a randomized controlled clinical trial. Group A (14 patients) received 3 doses of 5 μg s.c. each of vaccine at monthly intervals and 12 doses of 50 mg s.c. of thymopentin on alternate days between the first and the second vaccination. Group B (11 patients) received 3 doses of 5 μgs.c. each of vaccine at monthly intervals. Group C (15 patients) received 3 doses of 10 μg s.c. each of vaccine at monthly intervals. Immunization rates were 86% in group A (on both 1-month and 6-month checks), 36% on the 1-month and 27% on the 6-month check in group B, 53% on the 1-month and 47% on the 6-month check in group C. Anti-HBs antibody titers were similar in group A and C but notably lower in group B. Thymopentin seems as useful therapeutical tool for non responder patients. As it promotes T cell maturation and responsiveness, which are impaired in uremia, it could play a major part in the management of uremic immunodeficiency.

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We report a complete characterization of InAsxP1−x/InP (0.05<x<0.59) superlattices epitaxially grown by low pressure metalorganic chemical vapor deposition and by chemical beam epitaxy. Samples were obtained by both conventional growth procedures and by periodically exposing the just-grown InP surface to an AsH3 flux. Using the latter procedure, very thin InAsxP1−x/InP layers (10–20 Å) are obtained by P↔As substitutions effects. Arsenic composition of the so obtained layers depends both on AsH3 flux intensity and exposure times. Samples have been characterized by means of high resolution x-ray diffraction, high resolution transmission electron microscopy, 4 K photoluminescence, and extended x ray absorption fine structure spectroscopy. The combined use of high resolution x-ray diffraction and of 4 K photoluminescence, with related simulations, allows us to predict both InAsP composition and width, which are qualitatively confirmed by electron microscopy. Our study indicates that the effect of the formation of thin InAsP layers is due to the As incorporation onto the InP surface exposed to the As flux during the AsH3 exposure, rather than the residual As pressure in the growth chamber during InP growth. Arsenic K-edge extended x-ray absorption fine structure analysis shows that the first shell environment of As at these interfaces is similar to that found in bulk InAsxP1−x alloys of similar composition. In particular we measure an almost constant As–In bond length (within 0.02 Å), independent of As concentration; this confirms that epitaxy with InP is accompanied by local structural distortions, such as bond angle variations, which accommodate the nearly constant As–In bond length. In our investigation we characterize not only very high quality heterostructures but also samples showing serious interface problems such as nonplanarity and/or a consistent chemical spread along the growth axis. In the study presented here we thus propose a general method, based on several independent techniques, for the characterization of the interface quality of semiconductor superlattices.