We demonstrate a semiconductor laser-based approach which enables plasmonic active devices in the telecom wavelength range. We show that optimized laser structures based on tensile-strained InGaAlAs quantum wells-coupled to integrated metallic patternings-enable surface plasmon generation in an electrically driven compact device. Experimental evidence of surface plasmon generation is obtained with the slit-doublet experiment in the near-field, using near-field scanning optical microscopy measurements.

We demonstrate a new multi-frequency approach for mapping near-field optically induced forces with subwavelength spatial resolution. The concept relies on oscillating a scanning probe at two different frequencies. Oscillations at one frequency are driven electrically to provide positional feedback regulation. Modulations at another frequency are induced optically and are used to measure the mechanical action of the optical field on the probe. Because the measurement is based on locally detecting the force of the electromagnetic radiation acting on the probe, the new method does not require a photodetector to map the radiation distribution and, therefore, can provide true broadband detection of light with a single probe.