No abstract

An efficient self-stimulated Raman laser of Nd:Lu x Y 1−x VO 4 (x = 0.1, 0.26, 0.41, 0.61, 0.67 and 0.8) series crystals was demonstrated for the first time. Compared to YVO 4 , the relative Raman gain coefficients were determined by studying their spontaneous Raman scattering spectra. With the largest thermal conductivity, excellent energy storage capability and moderate Raman gain coefficient, the Nd:Lu 0.26 Y 0.74 VO 4 crystal presented the best Raman laser performance: 2.3 W average output power, 71 µJ single pulse energy and 26.3 kW peak power. The results indicated that the Nd:Lu 0.26 Y 0.64 VO 4 crystal should be an excellent self-Raman laser material.

The continuous wave and pulsed laser performances of a laser-diode-end-pumped c-cut Nd:Lu 0.1 Y 0.9 VO 4 crystal have been demonstrated for the first time. The small emission cross section and appropriate upper level lifetime result in the c-cut Nd:Lu 0.1 Y 0.9 VO 4 crystals having excellent pulsed laser performance. When the pulse repetition rate was 6.4 kHz, the shortest pulse width, the largest pulse energy and the highest peak power were found to be 1.9 ns, 104.7 µJ and 55.1 kW, respectively, using a Cr 4+ :YAG crystal as the saturable absorber. These results were much better than those for an a-cut Nd:Lu 0.1 Y 0.9 VO 4 crystal under the same conditions.