Abstract.A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a lowtemperature baking process instead of high-temperature annealing. This thermal treatment is performed after B + ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241 Am ( E α = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm 2 ) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84 Kr(E = 35 A MeV)+ 112 Sn. The ΔE −E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.

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The low power reactor for microwave chemical vapor deposition process is described. The rotating Mo holder of 12 mm diameter and 6 mm height with the diamond substrate was heated by 2.45 GHz microwaves to temperature about 800• C in the range of (1.57)% CH4/H2 mixture to create plasma at pressure 70 Tr. Stabilization of the holder temperature was performed by optical observation of radiation from the holder followed by adjusting of the magnetron power. Diamond detectors are produced using microwave chemical vapor deposition process grown on single crystal diamond high pressure high temperature Sumimoto substrates, [100] oriented. The response of diamond detectors for X-rays has been measured in the current mode using medical X-rays tube. The linear response of the diamond detector current versus X-ray tube current (dose) is presented.