This paper reports recent advances in the study of Frequency domain optical storage (FDOS) based on the photochemical hole-burning (PHB) method. New PHB systems are introduced which operate in the near IR regime and are suitable for the use of semiconductor lasers. Furthermore experiments to determine the spatial resolution of the method are presented. Future applications will also be discussed.
Frequency Domain Optical Storage (FDOS) based on the method of the Photochemical Hole-Burning (PHB) can be discussed as a possible successor of the present conventional optical storage schemes. The possibility of storing data in the frequency domain in addition to the two spatial dimensions enhances both the storage densities and the pertinent data access rates by more than one order of magnitude.
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