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Low temperature dependence of resistivity is studied in strongly interacting, dilute 2D GaAs hole systems in presence of magnetic field. Electrical resistivity was analyzed showing the contributions of quantum effects to the transport mechanism. Experimental results are compared with available theoretical models, and physical arguments are given to explain the behaviour of the electrical resistivity with temperature and magnetic field.

In this paper, we discuss low-temperature hopping-conductivity behavior in the insulating phase, in the absence of a magnetic field. We conduct a theoretical study of the crossover from hopping to activated transport in a GaAs two-dimensional hole system at low temperatures, finding that a crossover takes place from the Efros-Shklovskii variable-range hopping (VRH) regime to an activated regime in this system. This conductivity behavior in p-GaAs quantum wells is qualitatively consistent with the laws laid down in theories of localized electron interactions. Given sufficiently strong interactions, the holes in the localized states are able to hop collectively.

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