Efficient, long pulse lasing on the XeF(C→A) electronic transition has been demonstrated in an electron beam pumped device at a moderate pump rate of ∼250 kW/cm3 . A mixture of F2, NF3, Xe, Kr, and Ar at a total gas pressure of 1.6 atm was excited with a 700-ns pulse. Lasing occurred for 400 ns during the excitation pulse. The laser spectrum showed a peak wavelength of 483 nm and a bandwidth of 16 nm. An intrinsic efficiency of 0.7% was determined. The laser output energy was 1 J. Further improvements in laser performance are expected under fully optimized conditions.
The performance of the XeF(C→A) laser, pumped at a rate of 290 kW/cm3 with a 600-ns electron-beam pulse, has been improved through the optimization of the laser gas mixture and resonator output coupler reflectivity. An intrinsic efficiency of 1.1% and a specific output energy of 2 J/ℓ have been demonstrated. A uniformly pumped region of the gain medium was selected for diagnosis in these measurements. In a separate experiment with larger diameter mirrors, a total output energy of 4 J was recorded. These are the highest specific and total output energies reported thus far for a directly electrically excited XeF(C→A) laser. The laser pulse duration was 350 ns (FWHM), and the laser bandwidth was 160 Å. The small-signal net gain was measured during the electron-beam pulse at various wavelengths, and a peak gain of 0.4%/cm was observed. The sidelight fluorescence spectrum was also recorded.
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