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CdZnTe crystals were grown by the vertical Bridgman method in closed quartz ampoules. The crystalline quality and the impurity content of these crystals were studied. Several X-ray detectors were cut out of these crystals. The resistivity, emission spectra, product, and spectroscopic characteristics of these detectors were extensively measured and compared with the characteristics of detectors obtained from CdZnTe crystals grown by the boron oxide encapsulated vertical Bridgman technique. The detectors prepared from crystals grown without boron oxide show good value, spectroscopic resolution, and higher reproducibility. The influence of growth method on impurity content and on detector response was discussed.Index Terms-Boron oxide vertical Bridgman, CdZnTe, mobility-lifetime product, vertical Bridgman, X-ray detectors.

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