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In this study we report on the results of the investigation of lead iodide material properties. The effectiveness of a zone refining purification method on the material purity is determined by ICP-MS and ICP-OES and correlated to the electrical and physical material properties. We show that this zone refining method is very efficient in removing impurities from lead iodide, and we also determine the segregation coefficient for some of these impurities. Triple axis x-ray diffraction (TAD) analysis has been used to determine the crystalline perfection of the lead iodide after applying various cutting, etching and fabrication methods. The soft lead iodide crystal was found to be damaged when cleaved by a razor blade, but by using a diamond wheel saw, followed by etching, the crystallinity of the material was much improved, as observed by TAD. Low temperature photoluminescence also indicates an improvement in the material properties of the purified lead iodide. Electrical properties of lead iodide such as carrier mobility, were calculated based on carrier - phonon scattering. The results for the electrical properties were in good agreement with the experimental data.

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This comparative study ofthe performances ofCdTe and Cd1.,Zn,Te detectors at temperatures in the 25 -70°C range shows that CdZn2Te has a better performance as a ganimaray detector at elevated temperatures. Peak position shifts as ftinction oftemperature are less pronounced in spectra obtained with CdZn2Te detectors than in spectra from CdTe. The CdZn2Te detectors exhibited a FWHM of 24 % (at 60 °C) at 81 keV without significant deterioration due to the heating cycles. O-8194-1629-O/94/$6.0O SPIE Vol. 2305 / 167 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/24/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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