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In this work, the carrier confinement mechanism through nanostructures is studied in a copper-zinc-tin-sulfide/Cu2ZnSnSe4-type kesterite material, resulting in a remarkable performance enhancement of solar cells. The effect of the quantized energy band, recombination rate, and escape mechanism on the spectral response of solar cells is explored in detail. The mathematical model for carrier dynamics and performance measuring parameters are analyzed and optimized. Moreover, the number of quantum wells is incorporated gradually up to 100 and the corresponding performances are explored. It is observed that with the increase in the number of wells, photogenerated current density enhances significantly up to a saturation point and then deteriorates. A remarkable efficiency of 24.8% and more than 80% of quantum efficiency are achieved from 50 numbers of quantum wells with 79.8% of fill factor.

Kesterite materials, such as copper–zinc–tin–sulfide (CZTS) solar cell, have received considerable attention for low‐cost and high‐efficiency solar cells. However, the material suffers from poor quality of thin film during deposition, which, in turn, creates multiple grain boundaries along the layer. Consequently, a higher density of defects is randomly formed throughout the layer. Herein, the impact of different loss mechanisms on solar cell performance is analyzed. Numerical investigation on the influence of different loss mechanisms such as radiative recombination and recombination through traps and defects on the performance of the device is presented. A remarkable efficiency decrement of 10% in the devices is found due to the presence of defects and grain boundaries.

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