This paper discusses an extensive investigation on the influence of work-function (WF) tuning on analogue properties of the n-type junction-less strained double-gate MOSFET. The investigation on the device has been conducted with fixed level of input parameters operating in saturation mode by taking the dependency of analogue properties on the WF tuning into account. Numerical simulation was performed using industrial-based process/device simulator, Silvaco TCAD tools. The simulation results revealed that analogue properties of the device such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd) and early voltage (VEA) exhibited an increase of ~17.4%, ~104.7%, 96% and 69.4% respectively as the WF is slightly minimized. However, the output impedance (ro), and intrinsic gain (AV) were deteriorated for ~58.4% and ~16.2% respectively as the WF is slightly minimized.