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This work is devoted to simulation of interstitial atom diffusion in fcc metals with point defects. We used the molecular static and the Monte Carlo methods. An activation barrier set for different configurations of the carbon–vacancy complexes is simulated by the method of the molecular static (MS). Then we calculate atom jump rates for these configurations. The simulation of the carbon and vacancy migration in an fcc metal is realized on the basis of obtained atom jump rates by using the Monte-Carlo (MC) method. In particular, the calculations were made for the system of the nickel-carbon. In the result of that interstitial atom diffusion coefficient has been obtained at different temperatures.

This work is devoted to simulation of potential barrier spectrum for hydrogen atom and vacancy jumps in fcc- and bcc- metals taking into account the mutual effect of the point defects on the potential barrier spectrum and as a result the effect on complex defect diffusion in bcc- and fccmetals. The molecular static and the Monte Carlo methods are used. The developed model allows us to determine a diffusion coefficient of the impurity atom depending on temperature and other parameters. The simulation of point defect random walk in lattice on the basis MC-method and potential barrier spectrum has gave an impulse toward an understanding of hydrogen motion on the atomic scale in metals, which is required to determine such important parameters as the diffusion coefficient of H. As well it allows us to understand reasons of more complicated behaviour of H in realistic metal in comparison with perfect metal.