Articles you may be interested in X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma A Cl 2 -HBr-O 2 /Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate ($600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO x passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl 2 -based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be $1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl 2 -based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl 2 -based ICP etching for the recovery of the InP material.

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Articles you may be interested inA 7-nm nanocolumn structure fabricated by using a ferritin iron-core mask and low-energy Cl neutral beams Appl. Phys. Lett.Microelectromechanical tunneling sensor fabrication and post-processing characterization using focused ion beams J.

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The anodization of aluminium in a microwave excited O2 plasma has been studied at temperatures less than 100 °C. Thirty nanometers of oxide were grown in times substantially less than one hour. The growth kinetics follow those expected using the constant current growth mode. X-ray diffraction, Fourier transform infrared absorption, X-ray photoelectron spectroscopy, Auger electron spectroscopy, and electrical studies were carried out. The oxide is amorphous and stoichiometric, the as-grown films have high electrical conductivity. The method may be well suited for the formation of protective coatings.