Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films Hydrogen passivation of deep traps in diamond is demonstrated. Current-voltage (1-V) characteristics of polycrystaUine thin film and bulk diamond were studied before and after hydrogenation. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity, Hydrogenation was carried out under controlled conditions to study the changes in the J-V characteristics of the samples. The concentration of uncompensated traps 1454Appl. Phys. Lett. 56 (15), 9 April 1 990

Diamond has many unique physical properties useful as thin-film coatings for laser optics. The calculated value of the laser-induced stress resistance parameter of diamond is orders of magnitude higher than any other material and, therefore, diamond films should have a higher laser damage threshold. This is confirmed by laser damage experiments carried out on free-standing polycrystalline diamond films. Materials susceptible to laser damage can be protected by diamond thin-film coatings to enhance the damage threshold. This is demonstrated in the case of diamond coated silicon substrate.

Absfmcf-It is shown that the electrical properties of thin film and bulk diamond can be systematically altered by hydrogen plasma treatment under controlled conditions. The concentration of electrically active hydrogen introduced in diamond can be determined from the current-voltage characteristics of hydrogenated samples containing traps. Hydrogen passivation of deep traps in diamond is clearly demonstrated.

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