The first InGaAs radiation thermometer at NMIJ was developed more than ten years ago as a standard radiation thermometer operating from 150 to 1, 100 • C. Its size-of-source effect (SSE) was as large as 1% from 6 mm in diameter to 50 mm in diameter. The new thermometer has an SSE of 0.3%. The reason for the error in measuring the SSE of InGaAs thermometers was also found. The new thermometer at first suffered from nonlinearity and the distance effect (DE). These deficiencies arose from the misalignment of optics inside the thermometer and were solved by increasing the detector size from 1 mm in diameter to 2 mm in diameter. Unfortunately, the detector of 2 mm diameter had a smaller S/N ratio than that of the 1 mm one at the indium (In) point. The final design uses a detector of 1 mm diameter, but the radiation is focussed on a smaller area of the detector. The new thermometer is smaller and lighter than preceding designs and other standard InGaAs radiation thermometers. The temperature of the main part of the instrument, including the filter, the detector, and the preamplifier board, is controlled at 30 • C. In addition to the calibration with the six fixed points of copper (Cu), silver (Ag), aluminum (Al), zinc (Zn), tin (Sn), and indium (In), the linearity from the In point to the Cu point, the SSE, the DE, and the spectral responsivity were measured.

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We have calculated the thermal conductive properties and rate of temperature increase of a semiconductor laser on a polymer substrate. The temperature rises to 27 °C on the polymer interposer and the heat radiation effect is almost saturated in the case where the Au film has a thickness of 500 nm at 10 mW. Also, we have fabricated a 1.3 µm quantum dot (QD) laser with a stripe structure for the polymer interposer. We can achieve a low operating current threshold of 7 mA for the QD laser with a high mirror loss of 16 cm-1 at 1.3 µm emission because of the high quality of the QDs and the low scattering loss structure. Moreover, we have measured the heat distribution and rising temperature speed of a QD laser on a polymer substrate. These results indicate that we need to realize a high-efficiency laser source to achieve high transmission speeds in the future.