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Electrical properties and crystal perfection of undoped and n-type heavily arsenic-doped the Si-rich SiGe alloys bulk single-crystals were investigated. Influence of Ge atoms and doping by As on electrical properties and crystal perfection of SiGe alloys in the composition range 0-3at%Ge are reported. It was established, that carriers mobility in heavily impurity doped n-type Si-rich SiGe alloys is significantly lower, than in undoped alloys. It does not depend on the Ge concentration and is defined by carriers scattering upon impurity ions. It was established, that Ge atoms do not scatter as neutral centers. The mobility, related to the carriers scattering upon Ge atoms, can be explained in terms of "alloy" scattering. Investigation has shown that increasing of Ge content in Si increases dislocations density and disturbs their homogeneous distribution. The disturbance of homogeneous distribution of dislocations increases with increasing of Ge concentration. But dislocation structure is not revealed in heavily doped n-SiGe alloy crystals. Thus dilute heavily impurity-doped with arsenic SiGe alloys are similar to impurity-doped n-Si.

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