The National Nuclear Energy Agency (BATAN) Yogyakarta uses two kinds of paraffin for shielding radiation of Kartini reactor. For developing BNCT research, the radiation attenuation capability of paraffin has been analyzed to find out the coefficient attenuation, density, and composition of both kinds of paraffin. The components of the paraffin were analyzed using Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) spectroscopy characterization. Paraffin P1 has a density of 0.689 gr/mL and paraffin P2 is 0.578 gr/mL. Paraffin samples P1 and P2 were the sample content of functional group CH, CH2, and OH when analyzed by FTIR. Paraffin P2 had an additional content namely CO. The concentration of carbon (C) and oxide (O) of paraffin P2 was much greater than that of paraffin P1. Hydrogen (H) in the paraffin has the function of moderating neutrons, but hydrogen content in both kinds of paraffin could not be detected by EDX. The acquired neutron coefficient attenuation of paraffin P2 was 0.0382 cm-1 and the gamma coefficient attenuation was 0.0535 cm-1.

The effect of annealing time on the morphology and oxygen content of ZnO:Ga films has been deeply studied. ZnO:Ga films were grown with the use of the dc Magnetron Sputtering on the corning glass substrate. The films are grown with a plasma power of 30 watt, Argon gas pressure of 500 mtorr, and a substrate temperature of 300 °C for an hour deposition. The effect of annealing time on the morphology of ZnO:Ga films was observed by using Scanning Electron Microscope (SEM), whereas the oxygen content of the film was determined by Energy Dispersive X-ray (EDX) spectrometers. The SEM images showed that the ZnO:Ga film grown with an annealing time of 40 minutes possess relatively more homogeneous and compact morphology with smoother grain size than the ZnO:Ga films that deposited with annealing times of 30 and 50 minutes. The EDX results confirmed that this film possess lowest oxygen content (24.5 % of mass) but highest Ga content (1.7 % of mass) comparated to the ZnO:Ga thin films grown with another annealing times.

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