We observe a giant increase of the infrared intensity and a softening of the in-plane antisymmetric phonon mode E(u) ( approximately 0.2 eV) in bilayer graphene as a function of the gate-induced doping. The phonon peak has a pronounced Fano-like asymmetry. We suggest that the intensity growth and the softening originate from the coupling of the phonon mode to the narrow electronic transition between parallel bands of the same character, while the asymmetry is due to the interaction with the continuum of transitions between the lowest hole and electron bands. The growth of the peak can be interpreted as a "charged-phonon" effect observed previously in organic chain conductors and doped fullerenes, which can be tuned in graphene with the gate voltage.

We explore the role of phase fluctuations in a three-dimensional s-wave superconductor, NbN, as we approach the critical disorder for destruction of the superconducting state. Close to critical disorder, we observe a finite gap in the electronic spectrum which persists at temperatures well above T(c). The superfluid density is strongly suppressed at low temperatures and evolves towards a linear-T variation at higher temperatures. These observations provide strong evidence that phase fluctuations play a central role in the formation of a pseudogap state in a disordered s-wave superconductor.

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Recent measurements of the Fermi surface with de Haas-van Alphen oscillations in LaFePO showed a shrinking of the Fermi pockets with respect to first-principle calculations, suggesting an energy shift of the hole and electrons bands with respect to local-density approximations. We show that this shift is a natural consequence of the strong particle-hole asymmetry of electronic bands in pnictides, and that it provides an indirect experimental evidence of a dominant interband scattering in these systems.