Broadband, efficient and fast conversion of light to electricity is crucial for sensing and clean energy. Here we reveal the largest observed bulk photo-voltaic effect (BPVE), an intrinsic mechanism predicted to be ultrafast and exceed the Shockley-Quiesser limit. This discovery results from combining recent developments in the connection of BPVE to topology, Weyl semimetals and focused-ion beam fabrication. Our room temperature observation of the first BPVE in the mid-IR, is enabled by microscopic devices of the Weyl semimetal TaAs. Detailed symmetry analysis enables unambiguous separation of this response from competing photothermal effects. The size and wavelength range of the shift current offers new opportunities in optical detectors, clean energy, and topology, while directly demonstrating the utility of Weyl semimetals for applications.Converting light to electricity is crucial for clean energy, imaging, communications, chemical 1 arXiv:1712.04951v2 [cond-mat.mes-hall]

Semiconductor heterostructures have enabled a great variety of applications ranging from GHz electronics to photonic quantum devices. While nonlinearities play a central role for cutting-edge functionality, they require strong field amplitudes owing to the weak lightmatter coupling of electronic resonances of naturally occurring materials. Here, we ultrastrongly couple intersubband transitions of semiconductor quantum wells to the photonic mode of a metallic cavity in order to custom-tailor the population and polarization dynamics of intersubband cavity polaritons in the saturation regime. Two-dimensional THz spectroscopy reveals strong subcycle nonlinearities including six-wave mixing and a collapse of lightmatter coupling within 900 fs. This collapse bleaches the absorption, at a peak intensity one order of magnitude lower than previous all-integrated approaches and well achievable by state-of-the-art QCLs, as demonstrated by a saturation of the structure under cw-excitation. We complement our data by a quantitative theory. Our results highlight a path towards passively mode-locked QCLs based on polaritonic saturable absorbers in a monolithic singlechip design.

A key requirement for quantum computing, in particular for a scalable quantum computing architecture, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor is the output swing of the charge sensor. We demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs), which exceed the response of a conventional charge sensing dot by more than ten times, resulting in a boosted output swing of 3 mV. This substantially improved output signal is due to a device design with a strongly decoupled drain reservoir from the sensor dot, mitigating negative feedback effects of conventional sensors. The large output signal eases the use of very low-power readout amplifiers in close proximity to the qubit and will thus render true scalable qubit architectures with semiconductor based qubits possible in the future.

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Coupling multiple, highly non-resonant cavity and electronic modes, we reach unprecedented coupling strengths equivalent to ΩR/ωc=3.19. The new regime features over 10 polaritons spanning 6 octaves and vacuum ground state populations exceeding 1 photon.