We describe a process for transferring a 200 nm thick, 200 mm wide monocrystalline silicon (mono c-Si) thin film from a silicon-on-insulator onto a flexible polymer substrate. The result is a stretchable and flexible ultra-thin semi-conductor film that can be subjected to tensile stress experiments. The process uses off-the-shelf 200 mm wafers and standard polymer temporary bonding techniques. The backside substrate and buried oxide are removed using grinding and wet etching processes. No cracks or wrinkles are observed on the film prior to the tensile stress experiments. The stretching of the flexible structure results in up to 1.5% uniaxial tensile elastic strain on the thin mono c-Si film.

A scalable manufacturing method is demonstrated for the transfer of crystalline AlN thin-films deposited on 200 mm Si wafer onto a flexible and stretchable polymer. The resulting AlN-On-Polymer (AOP) can be bent and stretched. This novel transfer process allows a straightforward strain-engineering method of semiconductor thin-films when transferred onto polymer. Straining controllably semiconductor thin-films may alter their properties, which may boost the performance of the corresponding devices; e.g. the piezoelectric properties of AlN are enhanced upon tensile strain. We present here the transfer process of AlN thin-films onto polymer substrates; we discuss the influence of uniaxial strain on microstructural properties of AOP after in situ Raman spectroscopy assessments and relative strain evaluations by X-ray diffractions of AlN thin-films embedded in different types of stack configurations.