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In the present study, ZnO and Al:ZnO (AZO) thin films were prepared by reactive RF sputtering on quartz substrates at a constant oxygen partial pressure and a typical sputtering power. Films were annealed at different temperatures in argon ambient in the oven to study their various structural and optical properties. It was understood that introducing Al into ZnO structure would affect the ZnO crystalline structure noticeably. It was observed that annealing had great influence on various properties of thin films while ZnO film showed low crystallinity, Al doping into ZnO structure pronounced significant improvement in both crystallinity and particle sizes. It was found that crystal structures, average crystalline sizes, and topology of all thin films were modified enormously by post-annealing. It was shown that films transparency fluctuated by annealing, in which the transparency of AZO thin film annealed at 500°C was much greater than others. Annealing led to decrease optical band gap of all annealed films from 3.31 to 3.26 eV for ZnO and 4 to 3.4 eV for AZO films. Photoluminescence manifested that blue emission in as-deposited film led to two different blue and violet emissions in all AZO and ZnO films. It was identified that the emission intensity of AZO film annealed at 500°C was 12 times more than other ZnO and AZO films.

The results of time-dependent one-dimensional modelling of a dielectric barrier discharge (DBD) in a nitrogen-oxygenwater vapor mixture at atmospheric pressure are presented. The voltage-current characteristics curves and the production of active species are studied. The discharge is driven by a sinusoidal alternating high voltage-power supply at 30 kV with frequency of 27 kHz. The electrodes and the dielectric are assumed to be copper and quartz, respectively. The current discharge consists of an electrical breakdown that occurs in each half-period. A detailed description of the electron attachment and detachment processes, surface charge accumulation, charged species recombination, conversion of negative and positive ions, ion production and losses, excitations and dissociations of molecules are taken into account. Timedependent one-dimensional electron density, electric field, electric potential, electron temperature, densities of reactive oxygen species (ROS) and reactive nitrogen species (RNS) such as: