CCD sensor capable of 100 Mfps (millions frames per second) burst rate has been designed, fabricated and tested. ILTarchitecture sensor can capture 16 successive frames with 64x64 pixels and down to 10 ns time resolution. Each pixel consists of a photosite and 16 storage elements arranged in two separate CCD shift registers of 8 elements each. The shift registers connect continuously (and serially) from pixel to pixel to form a column. During burst integration, charge from the photosite is read out alternatively upward and downward into storage elements. During readout time, the photosite is reset while previously integrated charge packets are transferred into horizontal CCD registers located at opposite sides of the sensor. Lag as low as 10% at 100Mfps burst frame rate has been demonstrated. To compensate for low fill factor, microlens array is attached to the die.

A farrLily of VP CCD image sensors for different industrial and scientific applications was designed, fabricated and tested. All of them share the common concept of a "2.5-phase" photosensitive cell, combining the advantages of known "1.5-phase" VP devices (reduced dark current and increased quantum efficiency) with simpler fabrication process and extended functions.

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