We report electrical characterization of monolayer molybdenum disulfide (MoS 2 ) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO 4 ) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS 2 devices (without polymer electrolyte) fabricated on Si/SiO 2 have low channel mobility and large contact resistance, both of which severely limit the field-effect mobility of the devices. A thin layer of PEO/ LiClO 4 deposited on top of the devices not only substantially reduces the contact resistance but also boost the channel mobility, leading up to three-orders-ofmagnitude enhancement of the field-effect mobility of the device. When the polymer electrolyte is used as a gate medium, the MoS 2 field-effect transistors exhibit excellent device characteristics such as a near ideal subthreshold swing and an on/off ratio of 10 6 as a result of the strong gatechannel coupling.

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