Native defects in mask blanks is one of the key issues in extreme ultraviolet lithography. If defect-free mask blanks is the only solution, the resulting cost will be very high due to the low yield of such blanks. In this paper, we present a method for fabricating defect-free-like EUV masks by implementing several novel techniques such as global pattern shift, fine metrology-orientation and precise e-beam second-alignment from blank preparation to e-beam exposure. The mitigation success rate versus mask pattern density is simulated and verified by lithographic results using mitigated masks.Our methodology provides a way to achieve defect-free-like EUV mask blanks.