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Heterostructure light-emitting diodes (LEDs) were fabricated by growing ZnO nanorods and undoped ZnO films on p-GaN templates. The heterojunction showed a diode-like I -V characteristic and emitted electroluminescence (EL) peaks at 383 nm, 402 nm, 438 nm, and 507 nm under forward bias. Since the electrons from ZnO nanorods and the holes from p-GaN could be injected into ZnO films with a relatively low carrier concentration and mobility, the radiative recombination was mainly confined in the ZnO film region. As a result, the ZnO nanorods/i-ZnO/p-GaN light emitting diode exhibits a stronger ultraviolet-violet emission peak.

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