No abstract

Summary Very‐high‐frequency (VHF) resonant converters have the advantages of small volume, light weight, and high power density. However, under the operating frequency of tens of megahertz, the nonlinear characteristics of the power semiconductor devices intrinsic capacitances will affect the analysis accuracy of VHF converters and increase the difficulty of parameter design of these converters. Thus, this paper proposes a method to obtain the equivalent capacitances of power semiconductor devices. Taking the VHF resonant boost converter as an example, the process of obtaining the equivalent capacitances of power semiconductor devices is elaborated first. And then a prototype with operating frequency 17.30 MHz, input voltage 3–6 V, and output voltage 9–18 V is built to verify the feasibility and effectiveness of the proposed method.