In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film of co-deposited Pt/Al2O3 instead of the commonly used catalytic metal-based contacts were fabricated and characterized for CO detection at elevated temperatures and different CO and O2 levels. It can be concluded that the sensing mechanism at elevated temperatures correlates with oxygen removal from the sensor surface rather than the surface CO coverage as observed at lower temperatures. The long-term stability performance was also shown to be improved compared to that of previously studied devices.

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Cover Image shows a schema c of the SiC-FET transducer with, in the order from top le to bo om right the sensor device chip, a 3D cross-sec on of the sensor structure and an SEM image of a porous Pt/Al2O3 film used as sensing layer.During the course of the research underlying this thesis, Lida Khajavizadeh was enrolled in Agora Materiae, a mul disciplinary doctoral program at