The low frequency noise features of InSb grown on GaAs and Si substrates using molecular-beam epitaxy are investigated in the temperature range from 80 to 300 K. In all samples the flicker noise dominates the spectra, with Hooge factors as low as 2×10−5 and 9×10−5 for InSb on GaAs and Si, respectively. The temperature dependence of the Hooge factors is investigated.

Narrow‐gap (In,Mn)Sb layers, which offer prospects for infrared spin‐photonics, were grown on GaAs (001) substrates using a Riber Compact 21T MBE system and a Veeco valved cracker cell for Sb. Samples consisting 0.4 μm (In,Mn)Sb/GaAs with different Mn content in the range of 1% were examined in this study in respect of their structural, magnetotransport and magnetization properties. It is found that Mn decreases the lattice constant as well as the degree of relaxation of (In,Mn)Sb films. The hole concentration increases with increasing Mn concentration resulting increased acceptor concentration and decreased resistivity. The magnetoresistance is found to be sensitive to the Mn concentration. The temperature‐dependent resistivity data at lower than 30 K show an increased resistivity with decreasing temperature, suggesting the insulating behavior of the samples. In addition, magnetization measurements reveal distinct hysteresis loops, indicating the ferromagnetic properties. The measured saturation magnetization values of the films are found to be dependent on Mn concentration. The Curie temperature is estimated to be below 50 K. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The replacement of native oxides with deposited oxides in CMOS technology opens the door to replacing the Si with semiconductors without high-quality native oxides. For example, the use of InSb in logic applications could allow much lower operating voltages and power dissipation due to the InSb channels reaching saturation at significantly lower electric fields. Epitaxy of InSb onto Si could be done directly or using an intermediate layer such as GaP, GaAs, or InP. In the current work we describe the growth of InSb on Si (001) and discuss the structural and electrical properties of the resulting InSb films. The samples were characterized in terms of background electron concentration, mobility, deep level traps, Hall sensitivity, and x-ray rocking curve width.Samples were grown using molecular-beam epitaxy in a Riber-Compact 21T system. Antimony was supplied with a Veeco valved cracker cell. Vicinal Si(001) substrates offcut by 4º toward [110] were prepared by repeated oxidation and oxide-removal and then loaded into the MBE system. After the substrate temperature had been increased to about 820ºC, the surface shows a clear 24 reconstruction and appears to be free of oxide. This reconstruction remains until the substrate temperature reaches 1015ºC, at which temperature a 21 appears, indicating a dominance of double-height steps. After allowing the substrate to cool to the intended growth temperature for InSb, it is exposed to cracked Sb, resulting in the surface going from 21 to 11. This 11 reconstruction remains throughout the subsequent InSb deposition. InSb was deposited with a Sb/In flux ratio of about 5 and a growth rate of 0.2 nm/s. We have investigated growth temperatures between 300 and 420ºC for growth. To prevent the formation of the defects we introduced in some samples GaSb/AlSb supperlattice buffer layer. The best structural quality has been achieved at a growth temperature of 420ºC using GaSb/AlSb supperlattice buffer layer, resulting in our best electron mobility of 2.6104 cm2/Vs for a 2m film at room temperature. The samples grown at 420°C have the narrowest x-ray rocking curve width (FWHM of about 950 arcsec). Deep level noise spectra indicate the existence of the deep levels. The sample with the best crystal quality and highest mobility has the lowest traps. The deep levels have a temperature dependent behavior.

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