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A neural network-based object detection algorithm has the advantages of high accuracy and end-to-end processing, and it has been widely used in synthetic aperture radar (SAR) ship detection. However, the multi-scale variation of ship targets, the complex background of near-shore scenes, and the dense arrangement of some ships make it difficult to improve detection accuracy. To solve the above problem, in this paper, a spatial cross-scale attention network (SCSA-Net) for SAR image ship detection is proposed, which includes a novel spatial cross-scale attention (SCSA) module for eliminating the interference of land background. The SCSA module uses the features at each scale output from the backbone to calculate where the network needs attention in space and enhances the features of the feature pyramid network (FPN) output to eliminate interference from noise, and land complex backgrounds. In addition, this paper analyzes the reasons for the “score shift” problem caused by average precision loss (AP loss) and proposes the global average precision loss (GAP loss) to solve the “score shift” problem. GAP loss enables the network to distinguish positive samples and negative samples faster than focal loss and AP loss, and achieve higher accuracy. Finally, we validate and illustrate the effectiveness of the proposed method by performing it on SAR Ship Detection Dataset (SSDD), SAR-ship-dataset, and High-Resolution SAR Images Dataset (HRSID). The experimental results show that the proposed method can significantly reduce the interference of background noise on the ship detection results, improve the detection accuracy, and achieve superior results to the existing methods.

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In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulator—ATLAS. The investigation results have demonstrated that the breakdown voltage in the proposed structure is enhanced by 21.2%, and the FOM is improved by 39.6%. In addition, the proposed structure has an increased short-circuit capability.

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