Ligand-stabilized
colloidal metallic nanoparticles are prized in
science and technology for their electronic properties and tunable
surface chemistry. However, little is known about the interplay between
these two aspects of the particles. A particularly glaring absence
concerns the density of electronic states, which is fundamental in
explaining the electronic properties of solid-state materials. In
part, this absence owes to the difficulty in the experimental determination
of the parameter for colloidal systems. Herein, we demonstrate the
density of electronic states for metallic colloidal particles can
be determined from their magnetic susceptibility, measured using nuclear
magnetic resonance spectroscopy. For this study, we use small alkanethiolate
protected gold nanoparticles and demonstrate that changes in the surface
chemistry, as subtle as changes in alkane chain length, can result
inasmuch as a 3-fold change in the density of states at the Fermi
level for these particles. This suggests that surface chemistry can
be a powerful tool for controlling the electronic behavior of the
materials to which they are attached, and suggests a paradigm that
could be applied to other metallic systems, such as other metal nanoparticles,
doped semiconductor systems, and even 2D metals. For all of these
metallic systems, the Evans method can serve as a simple means to
probe the density of states near the Fermi level.
We report on the reaction between methyltriethoxysilane
(MTES)
and micrometer-sized aluminum particles, facilitated by HCl. This
reaction ultimately produces silane-coated aluminum particles. Using 27Al magic-angle spinning solid-state nuclear magnetic resonance,
we find that aluminum powder starts with a mixture of tetrahedrally,
pentahedrally, and octahedrally coordinated aluminum, with the pentahedral
species dominating. In the presence of HCl, however, the aluminum
undergoes a restructuring, so that octahedrally coordinated aluminum
is the dominant species. Using diffuse reflectance infrared spectroscopy
to confirm the deposition of silane, we find that this restructuring
of the aluminum in the presence of HCl is both a sufficient and necessary
condition for the deposition of the silane.
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