The application of a p+/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-1D program. The differences between p+−p—i—n configuration solar cells and p—i—n configuration solar cells are pointed out. The effects of dopant concentration, thickness of p+-layer, contact barrier height and defect density on solar cells are analyzed. Our results indicate that solar cells with a p+−p—i—n configuration have a better performance. The open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p+ layer and lowering the front contact barrier height. The defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property.