Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

Aqueous Zn-ion batteries (ZIBs) are a potential electrochemical energy storage device because of their highly intrinsic safety, low cost, and large capacity. However, it is still in the primary stage because of the limited selection of cathode materials with high rate and long-life cycling stability. In addition, the energy storage mechanisms of ZIBs have not been well established. In this work, we report the synthesis of porous V2O3@C materials with high conductivity and further illustrate its application as the intercalation cathode for aqueous zinc-ion batteries. The unique channel and appropriate pore size distribution of corundum-type V2O3 are beneficial to the rapid zinc ion intercalation and removal, leading to a high rate capability. Also, the carbon framework structure achieves a high cyclic stability. The porous V2O3@C cathode delivers high capacities of 350 mA h g–1 at 100 mA g–1, an excellent rate capability (250 mA h g–1 at 2 A g–1), and an impressive long-life cycling stability with 90% capacity retention over 4000 cycles at 5 A g–1. The storage mechanism of zinc ions in the Zn/V2O3 system was studied by various analytical methods and first-principles calculation.

In future nanocircuits based on two-dimensional (2D) materials, the ideal nonvolatile memories (NVMs) would be based on 2D multiferroic materials that can combine both efficient ferroelectric writing and ferromagnetic reading, which remain hitherto unreported. Here we show first-principles evidence that a halogen-intercalated phosphorene bilayer can be multiferroic with most long-sought advantages: its "mobile" magnetism can be controlled by ferroelectric switching upon application of an external electric field, exhibiting either an "on" state with spin-selective and highly p-doped channels, or an "off" state, insulating against both spin and electron transport, which renders efficient electrical writing and magnetic reading. Vertical polarization can be maintained against a depolarizing field, rendering high-density data storage possible. Moreover, all those functions in the halogenated regions can be directly integrated into a 2D phosphorene wafer, similar to n/p channels formed by doping in a silicon wafer. Such formation of multiferroics with vertical polarization robust against a depolarizing field can be attributed to the unique properties of covalently bonded ferroelectrics, distinct from ionic-bonded ferroelectrics, which may be extended to other van der Waals bilayers for the design of NVM in future 2D wafers. Every intercalated adatom can be used to store one bit of data: "0" when binding to the upper layer and "1" when binding to the down layer, giving rise to a possible approach of realizing single atom memory for high-density data storage.

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