To realize the design of a medical sensor with excellent comprehensive performance indexes, herein, a plasma concentration sensing model satisfying the Parity-Time (PT) symmetric condition is proposed. In this paper, the transfer matrix method was used to simulate the transmittance spectrum of the structure, according to the amplification effect on defect mode transmission and various detection performance indexes of the structure. We numerically optimized the parameters of the structure, such as the number of PT-symmetry unit cell N, the sample layer thickness dD as well as the macroscopic Lorentz oscillation intensity α in the PT-symmetry unit cell. The calculation results demonstrate that when the sample concentration changes from 0 g/L to 50 g/L, the wavelength of defect peak shifts from 1538 nm to 1561 nm, and the average quality factor, sensitivity, average figure of merit, average detection limit and average resolution of the structure can reach 78,564, 0.4409 nm/(g/L) (or 227.05 nm/RIU), 11,515 RIU−1, 5.1 × 10−6 RIU and 0.038 g/L, respectively. Not only the sensitivity and resolution of the PT-symmetry structure are better than that of the similar sensors, but it also has excellent comprehensive detection performance, which indicates that the developed sensor can be used in high-precision biomedical detection devices.

In the field of modern optical communication systems and photoelectric detection, new components with complex functions and excellent performance are urgently needed. In this paper, a graphene-based parity–time (PT) symmetry structure is proposed, which is achieved by preparing the graphene layer on the top of a PT-symmetry photonic crystal. The transfer matrix method was used to calculate the absorptance of graphene, and a unique amplified absorption effect was found. Meanwhile, the peak value and wavelength position of the absorption can be modulated via the applied electric field. The results show that by adjusting the negative square-wave electric field from −3.5 × 10−5 to −13.5 × 10−5 V/nm (or the positive square-wave electric field from 2 × 10−5 to 11 × 10−5 V/nm), the proposed structure can achieve in-phase (or out-phase) enhanced absorption for the communication wavelength 1550 nm, with the absorption of graphene from 17 to 28 dB (or 30 to 15 dB) corresponding to the square-wave modulation electric field change. The modulable absorption properties of graphene in the structure have potential in optoelectronic devices and optical communication systems.

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